MRF7S19120NR1【PDF 1/14 页】MOSFET RF N-CH TO-270-4

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MRF7S19120NR1

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistor

N--Channel Enhancement--Mode Lateral MOSFET

Designed for CDMA base station applications with frequencies from 1930 to

1990 MHz. Can be used in Class AB and Class C for all typical cellular base

station modulation formats.

Typical Single--Carrier W--CDMA Performance: VDD

=28Volts,IDQ

1200 mA, Pout

= 36 Watts Avg., f = 1990 MHz, IQ Magnitude Clipping,

Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%

Probability on CCDF.

Power Gain ? 18 dB

Drain Efficiency ? 32%

Device Output Signal PAR ? 6.1 dB @ 0.01% Probability on CCDF

ACPR @ 5 MHz Offset ? --38.5 dBc in 3.84 MHz Channel Bandwidth

Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 120 Watts CW

Output Power

Pout

@ 1 dB Compression Point

120 W CW

Features

100% PAR Tested for Guaranteed Output Power Capability

Characterized with Series Equivalent Large--Signal Impedance Parameters

Internally Matched for Ease of Use

Integrated ESD Protection

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

Designed for Digital Predistortion Error Correction Systems

225°C Capable Plastic Package

RoHS Compliant

In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

VDSS

--0.5, +65

Vdc

Gate--Source Voltage

VGS

--6.0, +10

Vdc

Operating Voltage

VDD

32, +0

Vdc

Storage Temperature Range

Tstg

-- 65 to +150

°C

Case Operating Temperature

150

°C

Operating Junction Temperature

(1,2)

225

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

(2,3)

Unit

Thermal Resistance, Junction to Case

Case Temperature 81°C, 120 W CW

Case Temperature 80°C, 36 W CW

RθJC

0.43

0.51

°C/W

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955,

Thermal Measurement Methodology of RF Power Amplifiers.

Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

Document Number: MRF7S19120N

Rev. 3, 3/2011

Freescale Semiconductor

Technical Data

MRF7S19120NR1

1930--1990 MHz, 36 W AVG., 28 V

SINGLE W--CDMA

LATERAL N--CHANNEL

RF POWER MOSFET

CASE 1730--02

TO--270 WBL--4

PLASTIC

Freescale Semiconductor, Inc., 2007, 2009, 2011.

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